IRIS
SALVUCCI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 4.745
EU - Europa 284
AS - Asia 218
Continente sconosciuto - Info sul continente non disponibili 3
Totale 5.250
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Nazione #
US - Stati Uniti d'America 4.744
SG - Singapore 109
CN - Cina 86
IE - Irlanda 63
IT - Italia 57
SE - Svezia 43
UA - Ucraina 28
DE - Germania 25
RU - Federazione Russa 19
FR - Francia 15
IN - India 10
GB - Regno Unito 7
CZ - Repubblica Ceca 6
FI - Finlandia 6
TR - Turchia 6
BE - Belgio 5
ES - Italia 4
EU - Europa 3
RO - Romania 3
IL - Israele 2
JP - Giappone 2
AT - Austria 1
CA - Canada 1
CH - Svizzera 1
HR - Croazia 1
MY - Malesia 1
TH - Thailandia 1
TW - Taiwan 1
Totale 5.250
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Città #
Wilmington 1.655
Houston 1.462
Woodbridge 437
Fairfield 234
Chandler 152
Singapore 97
Seattle 96
Ann Arbor 94
Cambridge 91
Ashburn 90
Dearborn 74
Dublin 63
Medford 43
Beijing 32
New York 24
Lawrence 21
Rome 20
Santa Clara 20
Jacksonville 12
Menlo Park 11
Moscow 10
San Diego 10
Kunming 9
Paris 7
Brno 6
Nanjing 6
Boardman 5
Brussels 5
Hefei 5
Jinan 5
Helsinki 4
Norwalk 4
Shanghai 4
Torrejón de Ardoz 4
Zhengzhou 4
Ankara 3
Chengdu 3
Guidonia 3
Ladispoli 3
Leawood 3
Los Angeles 3
Nepi 3
Saint Petersburg 3
Bengaluru 2
Fratte 2
Fuzhou 2
Gothenburg 2
Iasi 2
Kosekoy 2
Milpitas 2
Nanchang 2
Nuremberg 2
Prescot 2
Rehovot 2
San Mateo 2
Shenzhen 2
Bursa 1
Canino 1
Chiswick 1
Graz 1
Hangzhou 1
Hanover 1
Hounslow 1
Islington 1
Kuala Lumpur 1
Langfang 1
London 1
Milan 1
Ningbo 1
Quzhou 1
Sacramento 1
San Francisco 1
San Lazzaro di Savena 1
Sassenage 1
Shenyang 1
Taipei 1
Taiyuan 1
Tokyo 1
Toronto 1
Xian 1
Yokohama 1
Zagarolo 1
Totale 4.892
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Nome #
An active dispersive delay line in GaN MMIC technology for X-band applications 362
High performance X-band LNAs using a 0.25 μm GaN technology 340
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 326
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 316
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 313
Resistive bias network for optimized isolation in SPDT switches 311
A Q-Band MMIC Power Amplifier in GaN on Si Technology for Space Applications 302
A high-performance C-band integrated front-end in AlGaN/GaN technology 282
A 4W 37.5-42.5 GHz Power Amplifier MMIC in GaN on Si Technology 270
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 265
A GaN single chip front-end for C-band synthetic aperture radars 249
Mutual coupling reduction using metamaterial supersubstrate for high performance & densely packed planar phased arrays 249
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 248
High power-handling SPDT switch in 0.25-μm GaN technology 215
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 214
GaN S-Band Integrated Front-End for High Performance Microwave Electronics 201
GaN-based single-chip front-ends for radar systems 197
A GaN Single-Chip Front-End for Active Electronically Scanned Arrays 197
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 195
Single MMIC receivers for C-band T/R module in 0.25 μm GaN technology 173
High-Performance Microwave Circuits for Space and Defence 138
Totale 5.363
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Categoria #
all - tutte 11.680
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.680
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.719 0 0 0 210 203 244 238 206 186 168 136 128
2020/20211.075 122 145 125 158 100 127 119 101 21 27 16 14
2021/2022220 11 25 8 13 16 24 12 7 7 20 24 53
2022/2023359 24 45 6 45 39 74 21 25 44 4 16 16
2023/2024107 14 8 8 5 12 27 0 10 1 0 1 21
2024/2025210 23 117 67 3 0 0 0 0 0 0 0 0
Totale 5.363