TISBI, ELISA
TISBI, ELISA
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots
2016-01-01 Tisbi, E; Latini, V; Patella, F; Placidi, E; Arciprete, F
Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys
2020-07-10 Tisbi, E; Placidi, E; Magri, R; Prosposito, P; Francini, R; Zaganelli, A; Cecchi, S; Zallo, E; Calarco, R; Luna, E; Honolka, J; Vondracek, M; Colonna, S; Arciprete, F
Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys
2019-01-01 Cecchi, S; Dragoni, D; Kriegner, D; Tisbi, E; Zallo, E; Arciprete, F; Holý, V; Bernasconi, M; Calarco, R
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys
2022-01-01 Goletti, C; Fazi, L; Tisbi, E; Bonanni, B; Placidi, E; Arciprete, F
Sensing sub-surface strain in GaAsBi(001) surfaces by reflectance anisotropy spectroscopy
2022-01-01 Bonanni, B; Fazi, L; Tisbi, E; Placidi, E; Arciprete, F; Goletti, C
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling
2017-01-01 Latini, V; Placidi, E; Magri, R; Tisbi, E; Patella, F; Arciprete, F
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots
2016-01-01 Latini, V; Placidi, E; Arciprete, F; Tisbi, E; Patella, F; Magri, R
Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy
2017-01-01 Boschker, ; Tisbi, E; E, ; Placidi, E; Momand, J; Redaelli, A; Kooi, B; Arciprete, F; Calarco, R
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters
2017-01-01 Latini, V; Tisbi, E; Placidi, E; Patella, F; Biccari, F; Gurioli, M; Vinattieri, A; Arciprete, F
Understanding Growth-Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy
2024-01-01 Bonanni, B; Fazi, L; Tisbi, E; Arciprete, F; Goletti, C
| Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
|---|---|---|---|---|
| 1-gen-2016 | Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots | Tisbi, E; Latini, V; Patella, F; Placidi, E; Arciprete, F | Articolo su rivista | |
| 10-lug-2020 | Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys | Tisbi, E; Placidi, E; Magri, R; Prosposito, P; Francini, R; Zaganelli, A; Cecchi, S; Zallo, E; Calarco, R; Luna, E; Honolka, J; Vondracek, M; Colonna, S; Arciprete, F | Articolo su rivista | |
| 1-gen-2019 | Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys | Cecchi, S; Dragoni, D; Kriegner, D; Tisbi, E; Zallo, E; Arciprete, F; Holý, V; Bernasconi, M; Calarco, R | Articolo su rivista | |
| 1-gen-2022 | Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys | Goletti, C; Fazi, L; Tisbi, E; Bonanni, B; Placidi, E; Arciprete, F | Articolo su rivista | |
| 1-gen-2022 | Sensing sub-surface strain in GaAsBi(001) surfaces by reflectance anisotropy spectroscopy | Bonanni, B; Fazi, L; Tisbi, E; Placidi, E; Arciprete, F; Goletti, C | Articolo su rivista | |
| 1-gen-2017 | Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling | Latini, V; Placidi, E; Magri, R; Tisbi, E; Patella, F; Arciprete, F | Articolo su rivista | |
| 1-gen-2016 | Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots | Latini, V; Placidi, E; Arciprete, F; Tisbi, E; Patella, F; Magri, R | Articolo su rivista | |
| 1-gen-2017 | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy | Boschker, ; Tisbi, E; E, ; Placidi, E; Momand, J; Redaelli, A; Kooi, B; Arciprete, F; Calarco, R | Articolo su rivista | |
| 1-gen-2017 | Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters | Latini, V; Tisbi, E; Placidi, E; Patella, F; Biccari, F; Gurioli, M; Vinattieri, A; Arciprete, F | Articolo su rivista | |
| 1-gen-2024 | Understanding Growth-Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy | Bonanni, B; Fazi, L; Tisbi, E; Arciprete, F; Goletti, C | Articolo su rivista |