DI PIETRANTONIO, FABIO
DI PIETRANTONIO, FABIO
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs
2016-01-01 Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; Santoni, E; VERONA RINATI, G; Angelone, M; Pillon, M; Pompili, F; Benetti, M; Cannata', D; DI PIETRANTONIO, F
Flower-like aluminium nitride nanostructures deposited by rf magnetron sputtering on superhard rhodium boride films
2019-01-01 Di Pietrantonio, F; Fosca, M; Benetti, M; Cannata, D; Verona, C; Teghil, R; De Bonis, A; Rau, Jv
Gate-source distance scaling effects in H-terminated diamond MESFETs
2015-01-01 Verona, C; Ciccognani, W; Colangeli, S; DI PIETRANTONIO, F; Giovine, E; Limiti, E; Marinelli, M; VERONA RINATI, G
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density
2015-10-01 Verona, C; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Giovine, E; Limiti, E; Marinelli, M; Verona-Rinati, G
Hydrogen terminated diamond V2O5-based MISFETs
2016-09-01 Marinelli, M; Verona, C; Verona-Rinati, G; Ciccognani, W; Colangeli, S; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability
2021-01-01 De Santi, C; Pavanello, L; Nardo, A; Buffolo, M; Verona, C; Verona Rinati, G; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M
Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure
2017-01-01 Foglietti, V; Yang, N; Aruta, C; Orgiani, P; Di Pietrantonio, F; Cannata, D; Benetti, M; Balestrino, G
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator
2019-05-01 Verona, C; Benetti, M; Cannata, D; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Limiti, E; Marinelli, M; Verona-Rinati, G
Time-dependent degradation of hydrogen-terminated diamond MESFETs
2022-01-01 De Santi, C; Pavanello, L; Nardo, A; Verona, C; Verona Rinati, G; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M
V2O5 MISFETs on H-Terminated Diamond
2016-01-01 Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G; Cannata', D; Benetti, M; DI PIETRANTONIO, F
Vanadium pentoxide as an insulator for realizing H-diamond MISFETs
2016-09-01 Verona, C; Colangeli, S; Ciccognani, W; Verona-Rinati, G; Marinelli, M; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F
| Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
|---|---|---|---|---|
| 1-gen-2016 | 14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs | Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; Santoni, E; VERONA RINATI, G; Angelone, M; Pillon, M; Pompili, F; Benetti, M; Cannata', D; DI PIETRANTONIO, F | Articolo su rivista | |
| 1-gen-2019 | Flower-like aluminium nitride nanostructures deposited by rf magnetron sputtering on superhard rhodium boride films | Di Pietrantonio, F; Fosca, M; Benetti, M; Cannata, D; Verona, C; Teghil, R; De Bonis, A; Rau, Jv | Articolo su rivista | |
| 1-gen-2015 | Gate-source distance scaling effects in H-terminated diamond MESFETs | Verona, C; Ciccognani, W; Colangeli, S; DI PIETRANTONIO, F; Giovine, E; Limiti, E; Marinelli, M; VERONA RINATI, G | Articolo su rivista | |
| 1-ott-2015 | Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density | Verona, C; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Giovine, E; Limiti, E; Marinelli, M; Verona-Rinati, G | Intervento a convegno | |
| 1-set-2016 | Hydrogen terminated diamond V2O5-based MISFETs | Marinelli, M; Verona, C; Verona-Rinati, G; Ciccognani, W; Colangeli, S; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F | Intervento a convegno | |
| 1-gen-2021 | Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability | De Santi, C; Pavanello, L; Nardo, A; Buffolo, M; Verona, C; Verona Rinati, G; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M | Intervento a convegno | |
| 1-gen-2017 | Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure | Foglietti, V; Yang, N; Aruta, C; Orgiani, P; Di Pietrantonio, F; Cannata, D; Benetti, M; Balestrino, G | Articolo su rivista | |
| 1-mag-2019 | Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator | Verona, C; Benetti, M; Cannata, D; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Limiti, E; Marinelli, M; Verona-Rinati, G | Articolo su rivista | |
| 1-gen-2022 | Time-dependent degradation of hydrogen-terminated diamond MESFETs | De Santi, C; Pavanello, L; Nardo, A; Verona, C; Verona Rinati, G; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M | Intervento a convegno | |
| 1-gen-2016 | V2O5 MISFETs on H-Terminated Diamond | Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G; Cannata', D; Benetti, M; DI PIETRANTONIO, F | Articolo su rivista | |
| 1-set-2016 | Vanadium pentoxide as an insulator for realizing H-diamond MISFETs | Verona, C; Colangeli, S; Ciccognani, W; Verona-Rinati, G; Marinelli, M; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F | Intervento a convegno |