The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investigated by reflectance anisotropy spectroscopy (RAS), LEED and AES. Clean surfaces of the (2 x 4)/c(2 x 8) reconstruction were prepared in UHV by thermal desorption of a protective arsenic layer deposited on homoepitaxially grown MBE layers. Room temperature deposition of indium on the (2 x 4)/c(2 x 8) surface and subsequent annealing at 450 degrees C leads to a 90 degrees rotation of symmetry in the LEED pattern at a threshold coverage of 0.5 monolayers, i.e. a change from the (2 x 4)/c(2 x 8) to the (4 x 2),/c(8 x 2) reconstruction. The RAS spectra show the evolution of a distinct negative feature at 1.8 eV, that shifts to 2.1 eV after annealing, corresponding to optical transitions attributed to In-dimers orientated along the [011]-direction. AES analysis shows a change in growth mode beyond 0.5 ML indicating saturation of all available adsorption sites at this coverage and RAS spectra show a contribution from additional disordered In. The AES spectra display no evidence of a surface exchange reaction between gallium and arsenic atoms, thus indicating a surface termination by In-dimers adsorbed on a layer of As.

Springer, C., Resch Esser, U., Goletti, C., Richter, W., & Fimland, B. (1997). Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces. In Surface Science (pp.404-408). AMSTERDAM : ELSEVIER SCIENCE BV [http://dx.doi.org/10.1016/S0039-6028(96)01414-8].

Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces

GOLETTI, CLAUDIO;RICHTER, WOLFGANG;
1997

Abstract

The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investigated by reflectance anisotropy spectroscopy (RAS), LEED and AES. Clean surfaces of the (2 x 4)/c(2 x 8) reconstruction were prepared in UHV by thermal desorption of a protective arsenic layer deposited on homoepitaxially grown MBE layers. Room temperature deposition of indium on the (2 x 4)/c(2 x 8) surface and subsequent annealing at 450 degrees C leads to a 90 degrees rotation of symmetry in the LEED pattern at a threshold coverage of 0.5 monolayers, i.e. a change from the (2 x 4)/c(2 x 8) to the (4 x 2),/c(8 x 2) reconstruction. The RAS spectra show the evolution of a distinct negative feature at 1.8 eV, that shifts to 2.1 eV after annealing, corresponding to optical transitions attributed to In-dimers orientated along the [011]-direction. AES analysis shows a change in growth mode beyond 0.5 ML indicating saturation of all available adsorption sites at this coverage and RAS spectra show a contribution from additional disordered In. The AES spectra display no evidence of a surface exchange reaction between gallium and arsenic atoms, thus indicating a surface termination by In-dimers adsorbed on a layer of As.
16th European Conference on Surface Science
GENOA, ITALY
SEP 09-13, 1996
European Phys Soc, Condensed Matter Div, Surface & Interface Sect, Int Union Vacuum Sci Technol & Applicat
Rilevanza internazionale
contributo
Settore FIS/03 - Fisica della Materia
English
Gallium arsenide; Indium; Reflection spectroscopy
Intervento a convegno
Springer, C., Resch Esser, U., Goletti, C., Richter, W., & Fimland, B. (1997). Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces. In Surface Science (pp.404-408). AMSTERDAM : ELSEVIER SCIENCE BV [http://dx.doi.org/10.1016/S0039-6028(96)01414-8].
Springer, C; Resch Esser, U; Goletti, C; Richter, W; Fimland, B
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/43612
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