This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.

Ramella, C., Florian, C., del Rocío García González, M., Davies, I., Pirola, M., Colantonio, P. (2023). A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications. In 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (pp.4). IEEE [10.1109/INMMIC57329.2023.10321803].

A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications

Ramella, Chiara;Florian, Corrado;Pirola, Marco;Colantonio, Paolo
2023-01-01

Abstract

This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Aveiro, Portugal
2023
Rilevanza internazionale
contributo
2023
Settore ING-INF/01
English
Power measurement; Pulse measurements; Simulation; Space technology; Power amplifiers; Thermal management; Silicon; GaN; MMIC power amplifier; earth observation; space derating
Intervento a convegno
Ramella, C., Florian, C., del Rocío García González, M., Davies, I., Pirola, M., Colantonio, P. (2023). A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications. In 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (pp.4). IEEE [10.1109/INMMIC57329.2023.10321803].
Ramella, C; Florian, C; del Rocío García González, M; Davies, I; Pirola, M; Colantonio, P
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/345547
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