We have fabricated Sol-Gel synthesised Zinc Oxide (ZnO)-Reduced Graphene Oxide (rGO) on Fluorine-doped tin oxide (FTO) glass electrodes using a Dip Coating process. The Ag/ZnO-rGO/FTO sandwich structure showed bipolar resistive switching behavior. The resistive switching behavior can be attributed to the oxygen vacancies in the ZnO-rGO composite thin film giving rise to the formation and annihilation of conducting filament along the thin film. Good resistive switching (RS) characteristics with good On-OFF was also observed with good stability. The fabricated device has characteristics similar to that of biological synaptic plasticity and can be used for making electronics dynamical synapse.

Khanal, G., Acciarito, S., Cardarilli, G.c., Chakraborty, A., DI NUNZIO, L., Fazzolari, R., et al. (2018). ZnO-rGO composite thin film resistive switching device: emulating biological synapse behavior. In A. De Gloria (a cura di), Lecture Notes in Electrical Engineering: Applications in Electronics Pervading Industry, Environment and Society (pp. 117-123). Springer [10.1007/978-3-319-55071-8_15].

ZnO-rGO composite thin film resistive switching device: emulating biological synapse behavior

KHANAL, GAURAVMANI;ACCIARITO, SIMONE;CARDARILLI, GIAN CARLO;CHAKRABORTY, ABHISEK;DI NUNZIO, LUCA;FAZZOLARI, ROCCO;CRISTINI, ALESSANDRO;SUSI, GIANLUCA;RE, MARCO
2018-01-01

Abstract

We have fabricated Sol-Gel synthesised Zinc Oxide (ZnO)-Reduced Graphene Oxide (rGO) on Fluorine-doped tin oxide (FTO) glass electrodes using a Dip Coating process. The Ag/ZnO-rGO/FTO sandwich structure showed bipolar resistive switching behavior. The resistive switching behavior can be attributed to the oxygen vacancies in the ZnO-rGO composite thin film giving rise to the formation and annihilation of conducting filament along the thin film. Good resistive switching (RS) characteristics with good On-OFF was also observed with good stability. The fabricated device has characteristics similar to that of biological synaptic plasticity and can be used for making electronics dynamical synapse.
2018
Settore ING-IND/31 - ELETTROTECNICA
Settore ING-INF/01 - ELETTRONICA
English
Rilevanza internazionale
Capitolo o saggio
https://link.springer.com/chapter/10.1007/978-3-319-55071-8_15
Khanal, G., Acciarito, S., Cardarilli, G.c., Chakraborty, A., DI NUNZIO, L., Fazzolari, R., et al. (2018). ZnO-rGO composite thin film resistive switching device: emulating biological synapse behavior. In A. De Gloria (a cura di), Lecture Notes in Electrical Engineering: Applications in Electronics Pervading Industry, Environment and Society (pp. 117-123). Springer [10.1007/978-3-319-55071-8_15].
Khanal, G; Acciarito, S; Cardarilli, Gc; Chakraborty, A; DI NUNZIO, L; Fazzolari, R; Cristini, A; Susi, G; Re, M
Contributo in libro
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/189489
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 0
social impact