A zinc oxide (ZnO)-reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike-timing-dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications
Khanal, G., Acciarito, S., Cardarilli, G., Chakraborty, A., Di Nunzio, L., Fazzolari, R., et al. (2017). Synaptic behaviour in ZnO-rGO composites thin film memristor. ELECTRONICS LETTERS, 53(5), 296-298 [10.1049/el.2016.3655].
Synaptic behaviour in ZnO-rGO composites thin film memristor
Acciarito, S;Cardarilli, GC;Chakraborty, A;Di Nunzio, L;Fazzolari, R;Cristini, A;Re, M;Susi, G
2017-01-01
Abstract
A zinc oxide (ZnO)-reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike-timing-dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applicationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
