TISBI, ELISA
 Distribuzione geografica
Continente #
EU - Europa 68
AS - Asia 48
NA - Nord America 24
AF - Africa 1
OC - Oceania 1
Totale 142
Nazione #
US - Stati Uniti d'America 23
FR - Francia 18
IT - Italia 18
CN - Cina 16
JP - Giappone 11
DE - Germania 10
IN - India 7
GB - Regno Unito 6
KR - Corea 6
RU - Federazione Russa 6
SE - Svezia 5
HK - Hong Kong 3
TR - Turchia 3
CZ - Repubblica Ceca 2
SG - Singapore 2
AU - Australia 1
CA - Canada 1
GR - Grecia 1
MA - Marocco 1
NL - Olanda 1
UA - Ucraina 1
Totale 142
Città #
Rome 10
Tokyo 9
Gif-sur-yvette 7
Ann Arbor 5
Moscow 4
Berlin 3
Guangzhou 3
Istanbul 3
Arezzo 2
Chennai 2
Council Bluffs 2
Frankfurt am Main 2
Munich 2
Passau 2
Seoul 2
Stockholm 2
Vandières 2
Zhuhai 2
Adelaide 1
Ashburn 1
Bengaluru 1
Boardman 1
Borehamwood 1
Brescia 1
Central 1
Edmonton 1
Evanston 1
Gangnam-gu 1
Grenoble 1
Guilin 1
Hangzhou 1
Hong Kong 1
Kolkata 1
Los Angeles 1
Madison 1
Marrakesh 1
Milan 1
Nagoya 1
Nepi 1
New Orleans 1
New York 1
North Reading 1
Oberderdingen 1
Omsk 1
Orange 1
Pohang 1
Reading 1
Redondo Beach 1
Reston 1
San Jose 1
Shanghai 1
Slough 1
South Lyon 1
Toulouse 1
Urbana 1
Wuhan 1
Totale 102
Nome #
Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys, file e291c0d9-6e0f-cddb-e053-3a05fe0aa144 133
Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys, file e291c0d7-5795-cddb-e053-3a05fe0aa144 6
Understanding Growth-Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy, file 01d9894f-88c8-4ad5-aa7a-05c301f985a6 1
Sensing sub-surface strain in GaAsBi(001) surfaces by reflectance anisotropy spectroscopy, file 81ce8939-5f42-483d-8ab7-70f2b2de54bc 1
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters, file e291c0d6-c4d7-cddb-e053-3a05fe0aa144 1
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots, file e291c0d6-c4da-cddb-e053-3a05fe0aa144 1
Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys, file e291c0d7-505b-cddb-e053-3a05fe0aa144 1
Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys, file e291c0d8-a6d5-cddb-e053-3a05fe0aa144 1
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys, file eae1cb10-42e8-47ca-b672-9797308f0820 1
Totale 146
Categoria #
all - tutte 371
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 371


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20214 0 0 0 0 0 1 0 0 3 0 0 0
2021/202254 30 9 1 3 3 2 0 1 1 0 0 4
2022/202335 0 0 4 8 7 4 4 0 1 1 3 3
2023/202451 3 3 4 10 2 4 3 5 11 6 0 0
Totale 146