This paper presents the methodic design of the load network for class-F power amplifier (PA) with additional 3rd and 5th harmonics. The recommended load network equalizes the negative impact of the parasitic elements of the transistor (output capacity COUT and output inductance LOUT) on the performance of class-F power amplifier. The technique reduces the negative impact of the actual effects of the shunt capacitor CBYPASS in the supply circuit and blocking capacitor CDCBLOCK on the impedance created by the load network on the transistor chip. According to the given technique, we have designed class-F power amplifier adding the 3rd and 5th harmonics onto the operating frequency 1.6 GHz using the gallium nitride (GaN) transistor CGH60008D. Drain efficiency (ηD) 80.17%, power-added efficiency (PAE) 78.11% and output power (POUT) 38.9 dBm have been obtained through modeling on 1.6 GHz frequency.
Yefymovych, A., Krizhanovski, V., Giofre', R., Colantonio, P. (2014). Load network design technique for microwave class-F amplifier. In Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on. IEEE [10.1109/MIKON.2014.6899939].
Load network design technique for microwave class-F amplifier
GIOFRE', ROCCO;COLANTONIO, PAOLO
2014-06-16
Abstract
This paper presents the methodic design of the load network for class-F power amplifier (PA) with additional 3rd and 5th harmonics. The recommended load network equalizes the negative impact of the parasitic elements of the transistor (output capacity COUT and output inductance LOUT) on the performance of class-F power amplifier. The technique reduces the negative impact of the actual effects of the shunt capacitor CBYPASS in the supply circuit and blocking capacitor CDCBLOCK on the impedance created by the load network on the transistor chip. According to the given technique, we have designed class-F power amplifier adding the 3rd and 5th harmonics onto the operating frequency 1.6 GHz using the gallium nitride (GaN) transistor CGH60008D. Drain efficiency (ηD) 80.17%, power-added efficiency (PAE) 78.11% and output power (POUT) 38.9 dBm have been obtained through modeling on 1.6 GHz frequency.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
