Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than -40 dB the spectral purity of microwave sources.

Marcelli, R., Bartolucci, G., De Angelis, G., Lucibello, A., Proietti, E. (2011). Modulation instability in RF MEMS devices. In 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 (pp.263-267).

Modulation instability in RF MEMS devices

BARTOLUCCI, GIANCARLO;
2011-05-01

Abstract

Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than -40 dB the spectral purity of microwave sources.
DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Aix-en-Provence; France
2011
Rilevanza internazionale
contributo
mag-2011
mag-2011
Settore ING-INF/01 - ELETTRONICA
English
Mechanical frequency; Microwave sources; Modulation instabilities; Noise source; RF signal; RF-MEMS switches; Shunt capacitive; Spectral purity
Intervento a convegno
Marcelli, R., Bartolucci, G., De Angelis, G., Lucibello, A., Proietti, E. (2011). Modulation instability in RF MEMS devices. In 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 (pp.263-267).
Marcelli, R; Bartolucci, G; De Angelis, G; Lucibello, A; Proietti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/97149
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