Complementary resistive switch based stateful logic operations using material implication

Memristor based logic and memories are increasingly be- coming one of the fundamental building blocks for future system design. Hence, it is important to explore various methodologies for implementing these blocks. In this paper, we present a novel Complementary Resistive Switching (CRS) based stateful logic operations using material implica- tion. The proposed solution benefits from exponential reduction in sneak path current in crossbar implemented logic. We validated the effectiveness of our solution through SPICE simulations on a number of logic circuits. It has been shown that only 4 steps are required for implementing N input NAND gate whereas memristor based stateful logic needs N+1 steps.