A GaN-MMIC power module for microwave back-haul applications in C-band frequency range is presented in this contribution. The design is based on a commercial 0.25 μm channel length GaN power process. The module is composed of two stages. The final stage is designed in order to reach 38 dBm of saturated output power with high efficiency and AM/AM linearity. The driver stage is integrated in order to achieve 25 dB of gain and to partially compensate the phase distortion generated by the final stage. The size of the passive matching networks is minimized, allowing to implement the overall circuit in a 3×3mm2 chip area. An uneven drain bias voltage for the two stages is adopted in order to maximize the total efficiency. The module shows 38 dBm of saturated output power, 25 dB of gain, 55% of power added efficiency and less than 1.5 degree of phase distortion at 7 GHz.
Piazzon, L., Giofre', R., Colantonio, P., Giannini, F., Cipriani, E. (2014). An efficient, linear and compact GaN-MMIC power module for microwave backhaul links. In Proceedings of the Integrated Nonlinear Microwave and Millimetre-wave Circuits [10.1109/INMMIC.2014.6815095].
An efficient, linear and compact GaN-MMIC power module for microwave backhaul links
PIAZZON, LUCA;GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO;
2014-01-01
Abstract
A GaN-MMIC power module for microwave back-haul applications in C-band frequency range is presented in this contribution. The design is based on a commercial 0.25 μm channel length GaN power process. The module is composed of two stages. The final stage is designed in order to reach 38 dBm of saturated output power with high efficiency and AM/AM linearity. The driver stage is integrated in order to achieve 25 dB of gain and to partially compensate the phase distortion generated by the final stage. The size of the passive matching networks is minimized, allowing to implement the overall circuit in a 3×3mm2 chip area. An uneven drain bias voltage for the two stages is adopted in order to maximize the total efficiency. The module shows 38 dBm of saturated output power, 25 dB of gain, 55% of power added efficiency and less than 1.5 degree of phase distortion at 7 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
