Atomistic simulations of transport properties of an ultra-scaled silicon nanowire (SiNW) field-effect transistor (FETs) in a Gate-All-Around configuration are reported. The calculations have been obtained using a semi-empirical tight-binding representation of the system Hamiltonian based on first-principles density functional theory (DFT). An efficient non-equilibrium Green's functions (NEGF) scheme has been implemented in order to compute self-consistently the charge density and the electrostatic potential in the SiNW channel.
Pecchia, A., Penazzi, G., DI CARLO, A. (2007). Efficient Green's function algorithms for atomistic modeling of Si nanowire FETs. In SISPAD 2007: simulation of semiconductor processes and devices 2007 (pp.325-328). Vienna : Springer.
Efficient Green's function algorithms for atomistic modeling of Si nanowire FETs
DI CARLO, ALDO
2007-01-01
Abstract
Atomistic simulations of transport properties of an ultra-scaled silicon nanowire (SiNW) field-effect transistor (FETs) in a Gate-All-Around configuration are reported. The calculations have been obtained using a semi-empirical tight-binding representation of the system Hamiltonian based on first-principles density functional theory (DFT). An efficient non-equilibrium Green's functions (NEGF) scheme has been implemented in order to compute self-consistently the charge density and the electrostatic potential in the SiNW channel.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.