In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.
Camarchia, V., Cipriani, E., Colantonio, P., Ghione, G., Giannini, F., Pirola, M., et al. (2013). Advanced GaN-based high frequency power amplifiers. In Wireless Power Transfer (WPT), 2013 IEEE (pp.29-32) [10.1109/WPT.2013.6556874].
Advanced GaN-based high frequency power amplifiers
COLANTONIO, PAOLO;GIANNINI, FRANCO;
2013-01-01
Abstract
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
