Today, GaN-HEMT technology and Ultra Wide Band (UWB) power amplifiers are clearly identified as a strategic enabling technology for next generation MMICs to be implemented in high performance T/R Modules, Solid State Power Transmitters, Compact Receivers. To allow commercial market entry of GaN technology, a possible solution is represented by GaN-on-Silicon with a Field Plate active devices technology, in order to have a tradeoff between high RF Power performance and low cost. In this paper, a 1�7 GHz Single-Ended Power Amplifier, designed and fabricated with this technology, will be presented. The amplifier was designed by using a CAD oriented broad band matching approach for both input and output networks, and a saturated output power higher than 37 dBm is expected from measured/simulated data. The experimental load-source pull characterization in this frequency bandwidth was carried out together with a bias dependent Scattering parameters measured data.
Giofre', R., Colantonio, P., Giannini, F., Pantellini, A., Nanni, A., Lanzieri, C., et al. (2012). 1-7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate. In Microwave integrated circuits conference (EuMIC), 2012 7th European (pp.425-428).
1-7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate
GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO;
2012-10-01
Abstract
Today, GaN-HEMT technology and Ultra Wide Band (UWB) power amplifiers are clearly identified as a strategic enabling technology for next generation MMICs to be implemented in high performance T/R Modules, Solid State Power Transmitters, Compact Receivers. To allow commercial market entry of GaN technology, a possible solution is represented by GaN-on-Silicon with a Field Plate active devices technology, in order to have a tradeoff between high RF Power performance and low cost. In this paper, a 1�7 GHz Single-Ended Power Amplifier, designed and fabricated with this technology, will be presented. The amplifier was designed by using a CAD oriented broad band matching approach for both input and output networks, and a saturated output power higher than 37 dBm is expected from measured/simulated data. The experimental load-source pull characterization in this frequency bandwidth was carried out together with a bias dependent Scattering parameters measured data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
