Today, GaN-HEMT technology and Ultra Wide Band (UWB) power amplifiers are clearly identified as a strategic enabling technology for next generation MMICs to be implemented in high performance T/R Modules, Solid State Power Transmitters, Compact Receivers. To allow commercial market entry of GaN technology, a possible solution is represented by GaN-on-Silicon with a Field Plate active devices technology, in order to have a tradeoff between high RF Power performance and low cost. In this paper, a 1�7 GHz Single-Ended Power Amplifier, designed and fabricated with this technology, will be presented. The amplifier was designed by using a CAD oriented broad band matching approach for both input and output networks, and a saturated output power higher than 37 dBm is expected from measured/simulated data. The experimental load-source pull characterization in this frequency bandwidth was carried out together with a bias dependent Scattering parameters measured data.

Giofre', R., Colantonio, P., Giannini, F., Pantellini, A., Nanni, A., Lanzieri, C., et al. (2012). 1-7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate. In Microwave integrated circuits conference (EuMIC), 2012 7th European (pp.425-428).

1-7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate

GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO;
2012-10

Abstract

Today, GaN-HEMT technology and Ultra Wide Band (UWB) power amplifiers are clearly identified as a strategic enabling technology for next generation MMICs to be implemented in high performance T/R Modules, Solid State Power Transmitters, Compact Receivers. To allow commercial market entry of GaN technology, a possible solution is represented by GaN-on-Silicon with a Field Plate active devices technology, in order to have a tradeoff between high RF Power performance and low cost. In this paper, a 1�7 GHz Single-Ended Power Amplifier, designed and fabricated with this technology, will be presented. The amplifier was designed by using a CAD oriented broad band matching approach for both input and output networks, and a saturated output power higher than 37 dBm is expected from measured/simulated data. The experimental load-source pull characterization in this frequency bandwidth was carried out together with a bias dependent Scattering parameters measured data.
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Amsterdam, The Netherland
2012
Rilevanza internazionale
contributo
ott-2012
Settore ING-INF/01 - Elettronica
English
GaN;Power Amplifier;Ultra-wide band
Intervento a convegno
Giofre', R., Colantonio, P., Giannini, F., Pantellini, A., Nanni, A., Lanzieri, C., et al. (2012). 1-7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate. In Microwave integrated circuits conference (EuMIC), 2012 7th European (pp.425-428).
Giofre', R; Colantonio, P; Giannini, F; Pantellini, A; Nanni, A; Lanzieri, C; Pistoia, D
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/74489
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