This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively.
Saad, P., Colantonio, P., Moon, J., Piazzon, L., Giannini, F., Andersson, K., et al. (2012). Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. In Proceedings of the 13th annual IEEE Wireless and Microwave Technology Conference WAMICON2012 (pp.1-5) [10.1109/WAMICON.2012.6208427].
Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz
COLANTONIO, PAOLO;PIAZZON, LUCA;GIANNINI, FRANCO;
2012-01-01
Abstract
This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
