This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-SiC technologies provided by Selex-SI foundry. The former is still under development while the other one is more stable and under space qualification procedure. Thus, in order to give a comprehensive evaluation of both technologies, two PAs were developed in hybrid form for Ultra Wide Band (UWB) terrestrial applications using GaN-on-Si HEMT devices, and another one was developed in monolithic form for space transmitter using the GaN-on-SiC technology. About the hybrid PAs, two different active device peripheries were selected. The first one was a 10x100µm gate periphery named P10D and the second one was a 12x200µm gate periphery named P12G. The amplifiers were designed in a single ended configuration using the source/load-pull and Scattering parameters measured data. From the expected performances, the PA built with P10D has an operative bandwidth from 1 GHz to 7 GHz with a saturated output power higher than 37dBm while the other one has an operative bandwidth from 1 GHz to 6 GHz with a saturated output power around 41dBm. Instead, the HPA designed using GaN-on-SiC technology, represents the first step towards the realization of a fully integrated GaN transmitter for X-Band space applications. In this case, experimental results shown that the HPA reaches an output power higher than 41 dBm with a gain higher than 17 dBm and a ripple lower than 0.5 dB from 8.6 GHz to 10.6 GHz frequency range in a chip area lower than 10 mm2
Giofre', R., Colantonio, P., Giannini, F. (2012). GaN broadband power amplifiers for terrestrial and space transmitters. In Proceedings of 19. International Conference on Microwaves, Radar and Wireless Communications MIKON 2012 (pp.605-609) [10.1109/MIKON.2012.6233596].
GaN broadband power amplifiers for terrestrial and space transmitters
GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO
2012-01-01
Abstract
This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-SiC technologies provided by Selex-SI foundry. The former is still under development while the other one is more stable and under space qualification procedure. Thus, in order to give a comprehensive evaluation of both technologies, two PAs were developed in hybrid form for Ultra Wide Band (UWB) terrestrial applications using GaN-on-Si HEMT devices, and another one was developed in monolithic form for space transmitter using the GaN-on-SiC technology. About the hybrid PAs, two different active device peripheries were selected. The first one was a 10x100µm gate periphery named P10D and the second one was a 12x200µm gate periphery named P12G. The amplifiers were designed in a single ended configuration using the source/load-pull and Scattering parameters measured data. From the expected performances, the PA built with P10D has an operative bandwidth from 1 GHz to 7 GHz with a saturated output power higher than 37dBm while the other one has an operative bandwidth from 1 GHz to 6 GHz with a saturated output power around 41dBm. Instead, the HPA designed using GaN-on-SiC technology, represents the first step towards the realization of a fully integrated GaN transmitter for X-Band space applications. In this case, experimental results shown that the HPA reaches an output power higher than 41 dBm with a gain higher than 17 dBm and a ripple lower than 0.5 dB from 8.6 GHz to 10.6 GHz frequency range in a chip area lower than 10 mm2I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.