A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.
DI CARLO, A. (1998). Self-consistent tight-binding methods applied to semiconductor nanostructures. In Materials research society symposium: proceedings (pp.389-394). MRS.
Self-consistent tight-binding methods applied to semiconductor nanostructures
DI CARLO, ALDO
1998-01-01
Abstract
A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
