A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.

DI CARLO, A. (1998). Self-consistent tight-binding methods applied to semiconductor nanostructures. In Materials research society symposium: proceedings (pp.389-394). MRS.

Self-consistent tight-binding methods applied to semiconductor nanostructures

DI CARLO, ALDO
1998-01-01

Abstract

A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.
MRS Fall Symposium
Boston
1997
MRS
Rilevanza internazionale
Settore ING-INF/01 - Elettronica
English
approximation theory; electronic properties; heterojunctions; high electron mobility transistors; optical properties; optoelectronic devices; semiconductor lasers; envelope function approximation; semiconductor optical amplifier; tight binding model; semiconductor device structures
Intervento a convegno
DI CARLO, A. (1998). Self-consistent tight-binding methods applied to semiconductor nanostructures. In Materials research society symposium: proceedings (pp.389-394). MRS.
DI CARLO, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/6244
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