The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift. © 2005 American Institute of Physics.
Degoli, E., Cantele, G., Luppi, E., Magri, R., Ossicini, S., Ninno, D., et al. (2005). Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift. In AIP Conference Proceedings (pp.859-860).
Autori: | |
Autori: | Degoli, E; Cantele, G; Luppi, E; Magri, R; Ossicini, S; Ninno, D; Bisi, O; Onida, G; Gatti, M; Incze, A; Pulci, O; Del Sole, R |
Titolo: | Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift |
Nome del convegno: | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 |
Luogo del convegno: | Flagstaff, AZ |
Anno del convegno: | 26 July 2004 through 30 July 2004 |
Enti collegati al convegno: | International Union of Pure and Applied Physics (IUPAP);National Science Foundation (NSF);Air Force Office of Scientific Research (AFOSR);Office of Naval Research (ONR);Army Research Office (ARO) |
Rilevanza: | Rilevanza internazionale |
Data di pubblicazione: | 2005 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.1994377 |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Lingua: | English |
Tipologia: | Intervento a convegno |
Citazione: | Degoli, E., Cantele, G., Luppi, E., Magri, R., Ossicini, S., Ninno, D., et al. (2005). Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift. In AIP Conference Proceedings (pp.859-860). |
Appare nelle tipologie: | 02 - Intervento a convegno |