Long channel p-type field effect transistors were realized by using 5,10,15,20-tetra-phenyl porphyrin. The organic was deposited by spray coating from a chloroform solution onto thermally oxidized silicon substrates where chromium source and drain contacts were realized. Coplanar and structures with a high geometric ratio were defined by fine line lithography in order to increase the collected current. Gate bias up to -100 V and drain to source bias up to -30 V were used. Leakage paths through the dielectric, also at low voltage, were evidenced by monitoring the gate current. Source to drain currents were evaluated considering the Kirchhoff law keeping into account the leakage currents. On these basis, a complete characterization of the transistors was carried out. Threshold voltage equal to -7.5 V was estimated on a 40 Pro long device. Hole field effect mobility equal to 0.007 cm(2)/Vs was evaluated from zero-bias channel conductance. Besides, field dependent mobility as high as 0.012 cm(2)/Vs and transconductance equal to 6.5 muA/V were estimated from the analysis of the achieved results. The operation mechanism of the transistor and current modulation at low and high field is presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

Checcoli, P., Conte, G., Salvatori, S., Paolesse, R., Bolognesi, A., Berliocchi, M., et al. (2003). Tetra-phenyl porphyrin based thin film transistors. In Synthetic Metals (pp.261-266). ELSEVIER SCIENCE SA [10.1016/S0379-6779(02)01308-5].

Tetra-phenyl porphyrin based thin film transistors

PAOLESSE, ROBERTO;BRUNETTI, FRANCESCA;D'AMICO, ARNALDO;DI CARLO, ALDO;
2003-01-01

Abstract

Long channel p-type field effect transistors were realized by using 5,10,15,20-tetra-phenyl porphyrin. The organic was deposited by spray coating from a chloroform solution onto thermally oxidized silicon substrates where chromium source and drain contacts were realized. Coplanar and structures with a high geometric ratio were defined by fine line lithography in order to increase the collected current. Gate bias up to -100 V and drain to source bias up to -30 V were used. Leakage paths through the dielectric, also at low voltage, were evidenced by monitoring the gate current. Source to drain currents were evaluated considering the Kirchhoff law keeping into account the leakage currents. On these basis, a complete characterization of the transistors was carried out. Threshold voltage equal to -7.5 V was estimated on a 40 Pro long device. Hole field effect mobility equal to 0.007 cm(2)/Vs was evaluated from zero-bias channel conductance. Besides, field dependent mobility as high as 0.012 cm(2)/Vs and transconductance equal to 6.5 muA/V were estimated from the analysis of the achieved results. The operation mechanism of the transistor and current modulation at low and high field is presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
Spring Meeting of the European-Materials-Research-Society (E-MRS)
STRASBOURG, FRANCE
JUN 18-21, 2002
European Mat Res Soc
Rilevanza internazionale
contributo
Settore CHIM/07 - Fondamenti Chimici delle Tecnologie
Settore ING-INF/01 - Elettronica
English
Leakage currents; Molecular electronics; Organic thin film transistor; Porphyrins
Intervento a convegno
Checcoli, P., Conte, G., Salvatori, S., Paolesse, R., Bolognesi, A., Berliocchi, M., et al. (2003). Tetra-phenyl porphyrin based thin film transistors. In Synthetic Metals (pp.261-266). ELSEVIER SCIENCE SA [10.1016/S0379-6779(02)01308-5].
Checcoli, P; Conte, G; Salvatori, S; Paolesse, R; Bolognesi, A; Berliocchi, M; Brunetti, F; D'Amico, A; DI CARLO, A; Lugli, P
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/53567
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