Hydrogenated amorphous silicon-carbon films with carbon content, x=C/(C+Si), ranging from 0.08 to 0.28 have been Phi, from 64 to 242 mJ/cm(2). The crystallization of the silicon phase is induced in all the samples, independently of the alloy composition and the average Si crystallite size increases with the laser energy density. Cubic SiC crystallites, sized 200-450 Angstrom, are only detectable in samples with x>0.18 irradiated at Phi greater than or equal to 188 mJ/cm(2). The structural and electrical properties of the laser treated films have been investigated. After crystallization all films show a noticeable increase in dark conductivity. (C) 2003 Elsevier B.V. All rights reserved.

Coscia, U., Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., Tebano, A., et al. (2004). Laser annealing of hydrogenated amorphous silicon-carbon films. In Thin Solid Films (pp.7-12) [10.1016/j.tsf.2003.11.070].

Laser annealing of hydrogenated amorphous silicon-carbon films

TEBANO, ANTONELLO;
2004-01-01

Abstract

Hydrogenated amorphous silicon-carbon films with carbon content, x=C/(C+Si), ranging from 0.08 to 0.28 have been Phi, from 64 to 242 mJ/cm(2). The crystallization of the silicon phase is induced in all the samples, independently of the alloy composition and the average Si crystallite size increases with the laser energy density. Cubic SiC crystallites, sized 200-450 Angstrom, are only detectable in samples with x>0.18 irradiated at Phi greater than or equal to 188 mJ/cm(2). The structural and electrical properties of the laser treated films have been investigated. After crystallization all films show a noticeable increase in dark conductivity. (C) 2003 Elsevier B.V. All rights reserved.
Proceedings of Symposium H on Photonic Processing of Surfaces
Strasbourg, FRANCE
Rilevanza internazionale
Settore FIS/03 - Fisica della Materia
English
Crystallization; Laser treatment; Silicon-carbon alloys
Intervento a convegno
Coscia, U., Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., Tebano, A., et al. (2004). Laser annealing of hydrogenated amorphous silicon-carbon films. In Thin Solid Films (pp.7-12) [10.1016/j.tsf.2003.11.070].
Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A; Restello, S; Rigato, V
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/52400
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