We have developed a methodological approach which allows the deposition of high quality fully oxidized manganite thin films at low oxygen background pressure (10-4 - 10-3 mbar) by PLD. In such oxygen conditions the thickness of the deposited layer can be controlled at the level of a single unit cell by the use in situ of a conventional Reflection High Energy Electron Diffraction diagnostic. We show that by decreasing the laser fluence it is possible to improve the oxidation process in thin films under low background oxygen pressure. Films deposited at low laser fluence (about 0.2 J/cm2) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings. copyright The Electrochemical Society.

Tebano, A., Aruta, C., Boggio, N.g., Davidson, B.a., Medaglia, P.g., Tozzi, F., et al. (2006). Pulsed laser deposition of high-quality manganite thin films at low background pressures with in-situ reflection high energy electron diffraction. In ECS Transactions (pp.55-63) [10.1149/1.2357097].

Pulsed laser deposition of high-quality manganite thin films at low background pressures with in-situ reflection high energy electron diffraction

TEBANO, ANTONELLO;MEDAGLIA, PIER GIANNI;BALESTRINO, GIUSEPPE
2006-01-01

Abstract

We have developed a methodological approach which allows the deposition of high quality fully oxidized manganite thin films at low oxygen background pressure (10-4 - 10-3 mbar) by PLD. In such oxygen conditions the thickness of the deposited layer can be controlled at the level of a single unit cell by the use in situ of a conventional Reflection High Energy Electron Diffraction diagnostic. We show that by decreasing the laser fluence it is possible to improve the oxidation process in thin films under low background oxygen pressure. Films deposited at low laser fluence (about 0.2 J/cm2) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings. copyright The Electrochemical Society.
Nanostructured Metal Oxides: Processing and Applications - 210th Electrochemical Society Meeting
Cancun
29 October 2006 through 3 November 2006
ECS Physical and Analytical Electrochemistry Division;ECS Hight Temperature Materials Division;ECS Electrodeposition Division;ECS Sensor Division
Rilevanza internazionale
2006
Settore FIS/03 - FISICA DELLA MATERIA
English
Laser fluence; Manganite thin films; Post growth annealing treatment; High energy electron diffraction; In situ processing; Manganites; Pulsed laser deposition; Thin films
Intervento a convegno
Tebano, A., Aruta, C., Boggio, N.g., Davidson, B.a., Medaglia, P.g., Tozzi, F., et al. (2006). Pulsed laser deposition of high-quality manganite thin films at low background pressures with in-situ reflection high energy electron diffraction. In ECS Transactions (pp.55-63) [10.1149/1.2357097].
Tebano, A; Aruta, C; Boggio, Ng; Davidson, Ba; Medaglia, Pg; Tozzi, F; Balestrino, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/52396
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