A set of diamond films was grown by microwave chemical vapor deposition (MWCVD) using a CH4-H-2 gas mixture. Structural and crystallographic defects were induced in the samples either by choosing a relatively high substrate temperature, T-s = 950 degrees C, or by intentional contamination. In addition, different preferential orientations were obtained by appropriate changes to the CH4 concentration in the gas mixture. The resulting films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. Room temperature and liquid nitrogen temperature cathodoluminescence (CL) were investigated in the 200-800 nm wavelength range. A clear correlation with the growth conditions of the so-called band-A emission (435 nm) and of some sharp spectral features was observed. An explanation of this effect is given in terms of crystal defects which are induced by the growth process. (C) 1997 Elsevier Science S.A.
Marinelli, M., Paoletti, A., Tucciarone, A., Hatta, A., Ito, T., Hiraki, A., et al. (1997). Cathodoluminescence spectroscopy of synthetic diamond films. In Diamond and Related Materials (pp.717-720). LAUSANNE : ELSEVIER SCIENCE SA LAUSANNE [10.1016/S0925-9635(96)00753-4].
Cathodoluminescence spectroscopy of synthetic diamond films
MARINELLI, MARCO;
1997-04-01
Abstract
A set of diamond films was grown by microwave chemical vapor deposition (MWCVD) using a CH4-H-2 gas mixture. Structural and crystallographic defects were induced in the samples either by choosing a relatively high substrate temperature, T-s = 950 degrees C, or by intentional contamination. In addition, different preferential orientations were obtained by appropriate changes to the CH4 concentration in the gas mixture. The resulting films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. Room temperature and liquid nitrogen temperature cathodoluminescence (CL) were investigated in the 200-800 nm wavelength range. A clear correlation with the growth conditions of the so-called band-A emission (435 nm) and of some sharp spectral features was observed. An explanation of this effect is given in terms of crystal defects which are induced by the growth process. (C) 1997 Elsevier Science S.A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
