Two monolithic matrix amplifiers for ECM and ESM military equipment have been designed and realized using 0.25 μm GaAs PHEMT technology from UMS. Design trade-offs and performances are discussed in detail. The effects of the biasing network, termination load and total gate periphery on the performance of the amplifiers were considered for optimum design. The first amplifier, designed for gain flatness and noise figure yields gain of 19 ± 1 dB and a typical noise figure of 4 dB. The second unit exhibits a positive linear gain slope from 16 dB to 20 dB. Output power at l dB compression point is +12 dBm. The die size and bandwidth of each MMIC is 7 mm2 and 0.5-20 GHz respectively.

Lamesa, A., Giolo, G., Limiti, E. (2004). Design procedure and performance of two 0.5-20 GHz GaAs PHEMT MMIC matrix distributed amplifier for EW applications. In Conference Proceedings - European Microwave Conference (pp.9-12).

Design procedure and performance of two 0.5-20 GHz GaAs PHEMT MMIC matrix distributed amplifier for EW applications

LIMITI, ERNESTO
2004-10-01

Abstract

Two monolithic matrix amplifiers for ECM and ESM military equipment have been designed and realized using 0.25 μm GaAs PHEMT technology from UMS. Design trade-offs and performances are discussed in detail. The effects of the biasing network, termination load and total gate periphery on the performance of the amplifiers were considered for optimum design. The first amplifier, designed for gain flatness and noise figure yields gain of 19 ± 1 dB and a typical noise figure of 4 dB. The second unit exhibits a positive linear gain slope from 16 dB to 20 dB. Output power at l dB compression point is +12 dBm. The die size and bandwidth of each MMIC is 7 mm2 and 0.5-20 GHz respectively.
34th European Microwave Conference
London
12 October 2004 through 14 October 2004
Rilevanza internazionale
contributo
ott-2004
Settore ING-INF/01 - Elettronica
English
Acoustic noise; Bandwidth; Computer simulation; Gates (transistor); High electron mobility transistors; Integrated circuit layout; Mathematical models; Matrix algebra; Military electronic countermeasures; Monolithic microwave integrated circuits; Semiconducting gallium compounds; Distributed amplification principles; Electronic support measures (ESM); Ladder network filter theory; Optical transmission systems; Phased array radar systems; Power amplifiers
Intervento a convegno
Lamesa, A., Giolo, G., Limiti, E. (2004). Design procedure and performance of two 0.5-20 GHz GaAs PHEMT MMIC matrix distributed amplifier for EW applications. In Conference Proceedings - European Microwave Conference (pp.9-12).
Lamesa, A; Giolo, G; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/49753
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