Two monolithic matrix amplifiers for ECM and ESM military equipment have been designed and realized using 0.25 μm GaAs PHEMT technology from UMS. Design trade-offs and performances are discussed in detail. The effects of the biasing network, termination load and total gate periphery on the performance of the amplifiers were considered for optimum design. The first amplifier, designed for gain flatness and noise figure yields gain of 19 ± 1 dB and a typical noise figure of 4 dB. The second unit exhibits a positive linear gain slope from 16 dB to 20 dB. Output power at l dB compression point is +12 dBm. The die size and bandwidth of each MMIC is 7 mm2 and 0.5-20 GHz respectively.
Lamesa, A., Giolo, G., Limiti, E. (2004). Design procedure and performance of two 0.5-20 GHz GaAs PHEMT MMIC matrix distributed amplifier for EW applications. In Conference Proceedings - European Microwave Conference (pp.9-12).
Design procedure and performance of two 0.5-20 GHz GaAs PHEMT MMIC matrix distributed amplifier for EW applications
LIMITI, ERNESTO
2004-10-01
Abstract
Two monolithic matrix amplifiers for ECM and ESM military equipment have been designed and realized using 0.25 μm GaAs PHEMT technology from UMS. Design trade-offs and performances are discussed in detail. The effects of the biasing network, termination load and total gate periphery on the performance of the amplifiers were considered for optimum design. The first amplifier, designed for gain flatness and noise figure yields gain of 19 ± 1 dB and a typical noise figure of 4 dB. The second unit exhibits a positive linear gain slope from 16 dB to 20 dB. Output power at l dB compression point is +12 dBm. The die size and bandwidth of each MMIC is 7 mm2 and 0.5-20 GHz respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
