Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycrystalline diamond. Fabricated MESFETs typically showed high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency fT=10 GHz and a maximum oscillation frequency, fmAx, up to 35 GHz. These values suggest device microwave operation in the Kband are obtained through the fabrication of devices with geometry and active region dimensions compatible with available microelectronic technologies. Devices were realized in order to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, 'areas where diamond promises the replacement of vacuum electronics: with this perspective, our group realized a first important step formulating an equivalent circuit (EQC) model.
Calvani, P., Corsaro, A., Sinisi, F., Rossi, M.C., Conte, G., Giovine, E., et al. (2009). Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond. In German Microwave Conference, GeMIC 2009. IEEE.
Autori: | |
Autori: | Calvani, P; Corsaro, A; Sinisi, F; Rossi ,MC; Conte, G; Giovine, E; Limiti, E |
Titolo: | Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond |
Nome del convegno: | German Microwave Conference, GeMIC 2009 |
Luogo del convegno: | Munich |
Anno del convegno: | 16 March 2009 through 18 March 2009 |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
???metadata.dc.date.created???: | 2009-03 |
Data di pubblicazione: | mar-2009 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/GEMIC.2009.4815891 |
Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica |
Lingua: | English |
Altre informazioni significative: | Article number 4815891 |
Tipologia: | Intervento a convegno |
Citazione: | Calvani, P., Corsaro, A., Sinisi, F., Rossi, M.C., Conte, G., Giovine, E., et al. (2009). Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond. In German Microwave Conference, GeMIC 2009. IEEE. |
Appare nelle tipologie: | 02 - Intervento a convegno |