In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz.
Colantonio, P., Giannini, F., Giofrè, R., & Piazzon, L. (2007). Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology. In European Microwave Integrated Circuit Conference, 2007. EuMIC 2007. (pp.127-130). NEW YORK : IEEE.
Autori: | |
Autori: | Colantonio, P; Giannini, F; Giofrè, R; Piazzon, L |
Titolo: | Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology |
Nome del convegno: | European Microwave Integrated Circuits Conference |
Luogo del convegno: | Munich, GERMANY |
Anno del convegno: | OCT 08-10, 2007 |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
Data di pubblicazione: | ott-2007 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/EMICC.2007.4412664 |
Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica |
Lingua: | English |
Tipologia: | Intervento a convegno |
Citazione: | Colantonio, P., Giannini, F., Giofrè, R., & Piazzon, L. (2007). Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology. In European Microwave Integrated Circuit Conference, 2007. EuMIC 2007. (pp.127-130). NEW YORK : IEEE. |
Appare nelle tipologie: | 02 - Intervento a convegno |