In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz.
Colantonio, P., Giannini, F., Giofre', R., & Piazzon, L. (2007). Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology. In European Microwave Integrated Circuit Conference, 2007. EuMIC 2007. (pp.127-130). NEW YORK : IEEE [10.1109/EMICC.2007.4412664].
Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology
COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2007-10
Abstract
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
