In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz.

Colantonio, P., Giannini, F., Giofre', R., & Piazzon, L. (2007). Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology. In European Microwave Integrated Circuit Conference, 2007. EuMIC 2007. (pp.127-130). NEW YORK : IEEE [10.1109/EMICC.2007.4412664].

Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology

COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2007-10

Abstract

In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz.
European Microwave Integrated Circuits Conference
Munich, GERMANY
OCT 08-10, 2007
Rilevanza internazionale
contributo
Settore ING-INF/01 - Elettronica
English
Broadband amplifiers; Electronics industry; Gallium alloys; Gallium nitride; Microwave circuits; Microwave integrated circuits; Microwaves; Power amplifiers; Semiconducting gallium; Active devices; Drain efficiency; Dual bands; European; GaN-HEMT; Gate periphery; High-efficiency; Meas ured results; Output powers; Transmission conditions; Integrated circuits
Intervento a convegno
Colantonio, P., Giannini, F., Giofre', R., & Piazzon, L. (2007). Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology. In European Microwave Integrated Circuit Conference, 2007. EuMIC 2007. (pp.127-130). NEW YORK : IEEE [10.1109/EMICC.2007.4412664].
Colantonio, P; Giannini, F; Giofre', R; Piazzon, L
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/49531
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