The paper presents an efficient approach to evaluate the performance of electron devices under non stationary operation through an accurate mixed physics-electromagnetic based model. The analysis couples a three-dimensional (3-D) time domain solution of Maxwell's equation to the electron device model. The electron devices model is based on a simplified version of the first three moments of the Boltzmann transport equation (BTE). By means the proposed physics based model a conventional 0.2 mu m HEMT has been simulated. The numerical results show the effect of the interaction between electron and fields on the behavior of high frequency FETs.
Cidronali, A., Leuzzi, G., Collodi, G., Manes, G. (1998). Numerical model of a 0.2 mu m AlCaAs/GaAs HEMT including electromagnetic effects. In Compound semiconductors 1997 (pp.635-638). Bristol : IOP Publishing LTD.
Numerical model of a 0.2 mu m AlCaAs/GaAs HEMT including electromagnetic effects
1998-01-01
Abstract
The paper presents an efficient approach to evaluate the performance of electron devices under non stationary operation through an accurate mixed physics-electromagnetic based model. The analysis couples a three-dimensional (3-D) time domain solution of Maxwell's equation to the electron device model. The electron devices model is based on a simplified version of the first three moments of the Boltzmann transport equation (BTE). By means the proposed physics based model a conventional 0.2 mu m HEMT has been simulated. The numerical results show the effect of the interaction between electron and fields on the behavior of high frequency FETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
