A switchless Gallium Nitride PALNA (Power Amplifier and Low-Noise Amplifier) MMIC is presented. Design challenges and characterization results are disclosed. The MMIC, implemented in UMS foundry's 150-nm gate length GaN-on-SiC HEMT technology, features typically 31 dBm output power in TX mode and 4.5 dB noise figure in RX mode over the 30.5 34.5 GHz bandwidth. The pros and cons of this switchless T/R MMIC topology are addressed.
Longhi, P.e., Ciccognani, W., Colangeli, S., Serino, A., Limiti, E. (2025). Gallium Nitride Switchless PALNA MMIC Operating at Ka-Band Showing Typical 31 dBm Output Power and 4.5 dB Noise Figure. In 2025 20th European Microwave Integrated Circuits Conference (EuMIC) (pp.170-173). New York : IEEE [10.23919/eumic65284.2025.11234563].
Gallium Nitride Switchless PALNA MMIC Operating at Ka-Band Showing Typical 31 dBm Output Power and 4.5 dB Noise Figure
Longhi, Patrick Ettore;Ciccognani, Walter;Colangeli, Sergio;Serino, Antonio;Limiti, Ernesto
2025-10-01
Abstract
A switchless Gallium Nitride PALNA (Power Amplifier and Low-Noise Amplifier) MMIC is presented. Design challenges and characterization results are disclosed. The MMIC, implemented in UMS foundry's 150-nm gate length GaN-on-SiC HEMT technology, features typically 31 dBm output power in TX mode and 4.5 dB noise figure in RX mode over the 30.5 34.5 GHz bandwidth. The pros and cons of this switchless T/R MMIC topology are addressed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
