Rutile TiO2 nanoparticles as Raman micro-thermometer for self-heating analysis

In microelectrical systems, improving device performance and shrinking feature sizes make thermal design crucial. HPA based devices concentrate very high dissipation power in the sub-micron region, causing localized high channel temperatures. This study investigates rutile TiO2 microparticles as thermal probes for precise temperature mapping on semiconductor surfaces, focusing on silicon. Utilizing micro-Raman spectroscopy, we calibrate temperature responses across various substrates, revealing distinct behaviors influenced by volumetric ratios and proximity to heat sources. The scaling of Raman shifts with applied power highlights complex thermal dynamics critical for optimizing device performance and reliability. TiO2 microparticles demonstrate effectiveness in overcoming traditional thermometry method limitations, offering sub-micrometer spatial resolution and accurate temperature estimation. This study provides valuable insights into sub-micrometer thermal analysis, guiding advancements in microelectronic and microelectromechanical systems, particularly in managing localized high temperatures in GaN-based devices and improving device lifetime estimation.