An overview of the impact of the temperature on the small- and large-signal performance of 0.15-μm microwave GaN HEMTs

The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.