Ultra-low noise W Band amplifier has been implemented using 0.1um GaAs pHEMT technology. Four stages common source degeneration topology has been used to achieve less noise figure and stability. The bias network is designed to ensure stability from DC to 120 GHz. The LNA possesses the results after measurement showed the small signal gain of 19dB from 92-115 GHz with the noise figure less than 4.6dB. The fabricated LNA shows the highest operative bandwidth among those for which measured data are available in the relevant literature. The fabricated prototype occupies an active chip area of 4 × 2.5mm2 with power consumption constraint at 80mW from the 2V supply voltage.
Sharma, S.s., Sharma, S., Longhi, P., Colangeli, S., Ciccognani, W., Limiti, E. (2024). Mismatch based implementation of W band LNA using GaAs pHEMTs. In 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2024) (pp.1-3). Piscataway : IEEE [10.1109/PRIME61930.2024.10559742].
Mismatch based implementation of W band LNA using GaAs pHEMTs
Sharma S. S.;Sharma S.;Longhi P.;Colangeli S.;Ciccognani W.;Limiti E.
2024-01-01
Abstract
Ultra-low noise W Band amplifier has been implemented using 0.1um GaAs pHEMT technology. Four stages common source degeneration topology has been used to achieve less noise figure and stability. The bias network is designed to ensure stability from DC to 120 GHz. The LNA possesses the results after measurement showed the small signal gain of 19dB from 92-115 GHz with the noise figure less than 4.6dB. The fabricated LNA shows the highest operative bandwidth among those for which measured data are available in the relevant literature. The fabricated prototype occupies an active chip area of 4 × 2.5mm2 with power consumption constraint at 80mW from the 2V supply voltage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
