The right stoichiometry of Bi 2 Se 3 thin film have been confirmed by high resolution photoemission spectroscopy with submicron spatial resolution. In addition, two main growth dynamics regimes have been singled out, giving insights of the material interface formation.
Azizinia, M., Salvato, M., Amati, M., Gregoratti, L., Parmar, R., Rezvani, S.j., et al. (2023). First Stages of Ultrathin Bi2Se3 Film Physical Vapor Deposition Growth on SiO2/Si Substrate: An Advanced X-Ray Spectromicroscopy. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp.478-479). IEEE [10.1109/nmdc57951.2023.10344156].
First Stages of Ultrathin Bi2Se3 Film Physical Vapor Deposition Growth on SiO2/Si Substrate: An Advanced X-Ray Spectromicroscopy
Salvato, M.;Castrucci, P.;
2023-01-01
Abstract
The right stoichiometry of Bi 2 Se 3 thin film have been confirmed by high resolution photoemission spectroscopy with submicron spatial resolution. In addition, two main growth dynamics regimes have been singled out, giving insights of the material interface formation.File in questo prodotto:
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NMDC 2023 First_Stages_of_Ultrathin_Bi2Se3_Film_Physical_Vapor_Deposition_Growth_on_SiO2_Si_Substrate_An_Advanced_X-Ray_Spectromicroscopy.pdf
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