The right stoichiometry of Bi 2 Se 3 thin film have been confirmed by high resolution photoemission spectroscopy with submicron spatial resolution. In addition, two main growth dynamics regimes have been singled out, giving insights of the material interface formation.

Azizinia, M., Salvato, M., Amati, M., Gregoratti, L., Parmar, R., Rezvani, S.j., et al. (2023). First Stages of Ultrathin Bi2Se3 Film Physical Vapor Deposition Growth on SiO2/Si Substrate: An Advanced X-Ray Spectromicroscopy. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp.478-479). IEEE [10.1109/nmdc57951.2023.10344156].

First Stages of Ultrathin Bi2Se3 Film Physical Vapor Deposition Growth on SiO2/Si Substrate: An Advanced X-Ray Spectromicroscopy

Salvato, M.;Castrucci, P.;
2023-01-01

Abstract

The right stoichiometry of Bi 2 Se 3 thin film have been confirmed by high resolution photoemission spectroscopy with submicron spatial resolution. In addition, two main growth dynamics regimes have been singled out, giving insights of the material interface formation.
IEEE Nanotechnology Materials and Devices Conference (NMDC)
Paestum, Italy
2023
Rilevanza internazionale
2023
Settore FIS/03
English
Intervento a convegno
Azizinia, M., Salvato, M., Amati, M., Gregoratti, L., Parmar, R., Rezvani, S.j., et al. (2023). First Stages of Ultrathin Bi2Se3 Film Physical Vapor Deposition Growth on SiO2/Si Substrate: An Advanced X-Ray Spectromicroscopy. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp.478-479). IEEE [10.1109/nmdc57951.2023.10344156].
Azizinia, M; Salvato, M; Amati, M; Gregoratti, L; Parmar, R; Rezvani, Sj; Castrucci, P; Gunnella, R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/362205
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