Bi2Se3/n−Si heterojunctions have been successfully obtained by depositing BirSes films with thickness in the range 10 nm−100 nm on pre-patterned ndoped Si substrates by vapor solid deposition method. The samples present on/off ratio of the order of 105 and dark current in the range of 10nA. When illuminated with He-Ne radiation through the Bi 2 Se 3 layer, the unbiased detectors show very high linearity, responsivity as high as 60 mA/W and Detectivity in the range of 1011 Jones.
Salvato, M., Loudhaief, N., Castrucci, P. (2023). Wide band photodetectors based on Bi2Se3 Topological Insulator. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp.37-38). IEEE [10.1109/nmdc57951.2023.10343595].
Wide band photodetectors based on Bi2Se3 Topological Insulator
Salvato, M.
;Loudhaief, N.;Castrucci, P.
2023-01-01
Abstract
Bi2Se3/n−Si heterojunctions have been successfully obtained by depositing BirSes films with thickness in the range 10 nm−100 nm on pre-patterned ndoped Si substrates by vapor solid deposition method. The samples present on/off ratio of the order of 105 and dark current in the range of 10nA. When illuminated with He-Ne radiation through the Bi 2 Se 3 layer, the unbiased detectors show very high linearity, responsivity as high as 60 mA/W and Detectivity in the range of 1011 Jones.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
