The realization of a Ge/SiGe THz emitter is of great interest since it can help to reach room-temperature operation due to the peculiar electron- phonon interaction in nonpolar crystals. Here we present Ge/SiGe quantum-well building blocks epitaxially grown on silicon wafers in order to understand limitations of this material platform in the perspective of realizing a Si-based laser.
Ciano, C., Montanari, M., Persichetti, L., Stark, D., Scalari, G., Faist, J., et al. (2020). Perspectives on electrically pumped Ge/SiGe QW emitters at THz frequencies. In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/IRMMW-THz46771.2020.9370671].
Perspectives on electrically pumped Ge/SiGe QW emitters at THz frequencies
Persichetti, L.;
2020-01-01
Abstract
The realization of a Ge/SiGe THz emitter is of great interest since it can help to reach room-temperature operation due to the peculiar electron- phonon interaction in nonpolar crystals. Here we present Ge/SiGe quantum-well building blocks epitaxially grown on silicon wafers in order to understand limitations of this material platform in the perspective of realizing a Si-based laser.| File | Dimensione | Formato | |
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