Employing, electronic transitions in the conduction band of semiconductor heterostructures paves a way to integrate a light source into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe tcrahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV.
Stark, D., Persichetti, L., Montanari, M., Ciano, C., Gaspare, L.d., Seta, M.d., et al. (2019). Si-based n-type THz Quantum Cascade Emitter. In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). New York, USA : IEEE [10.1109/IRMMW-THz.2019.8874354].
Si-based n-type THz Quantum Cascade Emitter
Persichetti, L.;
2019-01-01
Abstract
Employing, electronic transitions in the conduction band of semiconductor heterostructures paves a way to integrate a light source into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe tcrahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV.File | Dimensione | Formato | |
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