This paper deals with the design and experimental results of the Engineering Model of a Solid State Power Amplifier (SSPA) based on 100 nm gate length Gallium Nitride on Silicon technology and spatial power combining techniques, targeting Ka-band downlink SatCom applications. The SSPA is divided in two main units: the Radio Frequency Tray (RFT) to amplify the useful signal, and the Electronic Power Conditioner to interface the module with the satellite primary bus, to actuate remote telecommand/telemetry services and to set different operating modes. In the overall bandwidth (17.3-20.2 GHz), the SSPA delivers up to 125 W of output power with a minimum efficiency and gain of 24% and 70 dB, respectively. Such remarkable output power level has been achieved combining 16 Monolithic Microwave Integrated Circuits Power Amplifiers designed ad-hoc, with a low-loss Radial splitter/combiner structure developed in waveguide. The RFT of the SSPA also includes a gain control unit, an analogue linearizer and a driver together with a waveguide coupler and an isolator at the output.
Giofre, R., Cabria, L., Leblanc, R., Lopez, M., Vitobello, F., Colantonio, P. (2023). A GaN-Based Solid State Power Amplifier for Satellite Communications. In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (pp.591-594). IEEE [10.1109/IMS37964.2023.10188138].
A GaN-Based Solid State Power Amplifier for Satellite Communications
Giofre, Rocco;Colantonio, Paolo
2023-01-01
Abstract
This paper deals with the design and experimental results of the Engineering Model of a Solid State Power Amplifier (SSPA) based on 100 nm gate length Gallium Nitride on Silicon technology and spatial power combining techniques, targeting Ka-band downlink SatCom applications. The SSPA is divided in two main units: the Radio Frequency Tray (RFT) to amplify the useful signal, and the Electronic Power Conditioner to interface the module with the satellite primary bus, to actuate remote telecommand/telemetry services and to set different operating modes. In the overall bandwidth (17.3-20.2 GHz), the SSPA delivers up to 125 W of output power with a minimum efficiency and gain of 24% and 70 dB, respectively. Such remarkable output power level has been achieved combining 16 Monolithic Microwave Integrated Circuits Power Amplifiers designed ad-hoc, with a low-loss Radial splitter/combiner structure developed in waveguide. The RFT of the SSPA also includes a gain control unit, an analogue linearizer and a driver together with a waveguide coupler and an isolator at the output.File | Dimensione | Formato | |
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