Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM

Recently, within the framework of a project funded by the European Space Agency, two concept demonstrators in OMMIC’s industrial-grade GaN HEMT technology on a Silicon substrate have been developed. The first test vehicle is an ultra Low-Noise Amplifier (LNA), realized in OMMIC’s 60-nm GaN HEMT technology, demonstrating state-of-the-art 1.2 dB Noise Figure, in the 26–32 GHz bandwidth. The second test vehicle is a Medium Level Amplifier (MLA), realized in OMMIC’s 100-nm GaN HEMT technology, providing +31 dBm Output Third Order Intercept point (OTOI). Both performances compare very well with recently published material.