Today, for several economic and environmental reasons, Electric Vehicles (EVs) have a notable impact over the automobile world market. Accordingly, the amount of charging stations with reduced charge time is increased. The design aspects and the realization of the isolated Four-Port bidirectional Dual Active Bridge DC-DC Converter (4P-DAB) for fast charging applications are described in this paper. The 4P-DAB can handle different sources and loads thanks to the connection between four full bridges to the four windings of the high-frequency (HF) transformer. The design procedure and the power devices selection are carried out. The conversion efficiency as a function of the output power for different control strategies is presented using the Silicon-Carbide (SiC) power semiconductors. Simulation and preliminary results are verified by realizing the switching model of the 100 kVA 4P-DAB in MATLAB/Simulink.
Di Benedetto, M., Lidozzi, A., Solero, L., Crescimbini, F., Bifaretti, S. (2020). Hardware design of SiC-based Four-Port DAB Converter for Fast Charging Station. In ECCE 2020 - IEEE Energy Conversion Congress and Exposition (pp.1231-1238). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/ECCE44975.2020.9236151].
Hardware design of SiC-based Four-Port DAB Converter for Fast Charging Station
Bifaretti S.
2020-01-01
Abstract
Today, for several economic and environmental reasons, Electric Vehicles (EVs) have a notable impact over the automobile world market. Accordingly, the amount of charging stations with reduced charge time is increased. The design aspects and the realization of the isolated Four-Port bidirectional Dual Active Bridge DC-DC Converter (4P-DAB) for fast charging applications are described in this paper. The 4P-DAB can handle different sources and loads thanks to the connection between four full bridges to the four windings of the high-frequency (HF) transformer. The design procedure and the power devices selection are carried out. The conversion efficiency as a function of the output power for different control strategies is presented using the Silicon-Carbide (SiC) power semiconductors. Simulation and preliminary results are verified by realizing the switching model of the 100 kVA 4P-DAB in MATLAB/Simulink.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
