In this paper we report on a morphological investigation of the growth mechanism of silicon carbide (SiC) on the Si(111)7 x 7 surface. The role of the substrate morphology and temperature during acetylene exposure has been studied with the aim to obtain high quality SiC films. We compared two starting points of silicon substrate: one characterised by step bunching and one by monoatomic terraces of the same width. Our results indicate that a lower density of defects and holes is present in the former case. (C) 2004 Elsevier B.V. All rights reserved.
Scarselli, M., Castrucci, P., Piancastelli, M.N., & De Crescenzi, M. (2004). Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface. In Surface Science (pp.155-159).
Autori: | |
Autori: | Scarselli, M; Castrucci, P; Piancastelli, MN; De Crescenzi, M |
Titolo: | Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface |
Nome del convegno: | 22nd European Conference on Surface Science (ECOSS 22) |
Luogo del convegno: | Prague, CZECH REPUBLIC |
Anno del convegno: | SEP 07-12, 2003 |
Enti collegati al convegno: | Inst Phys Acad Sci Czecg Republic, European Phys Soc, Surface Interface Div, Surf Div Int Union Vacuum Sci, Tech & Applicat |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
???metadata.dc.date.created???: | 2003-09-07 |
Data di pubblicazione: | 19-giu-2004 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.susc.2004.06.065 |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Lingua: | English |
Tipologia: | Intervento a convegno |
Citazione: | Scarselli, M., Castrucci, P., Piancastelli, M.N., & De Crescenzi, M. (2004). Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface. In Surface Science (pp.155-159). |
Appare nelle tipologie: | 02 - Intervento a convegno |