In this paper we report on a morphological investigation of the growth mechanism of silicon carbide (SiC) on the Si(111)7 x 7 surface. The role of the substrate morphology and temperature during acetylene exposure has been studied with the aim to obtain high quality SiC films. We compared two starting points of silicon substrate: one characterised by step bunching and one by monoatomic terraces of the same width. Our results indicate that a lower density of defects and holes is present in the former case. (C) 2004 Elsevier B.V. All rights reserved.

Scarselli, M.a., Castrucci, P., Piancastelli, M.n., & DE CRESCENZI, M. (2004). Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface. In Surface Science (pp.155-159) [10.1016/j.susc.2004.06.065].

Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface

SCARSELLI, MANUELA ANGELA;CASTRUCCI, PAOLA;PIANCASTELLI, MARIA NOVELLA;DE CRESCENZI, MAURIZIO
2004-06-19

Abstract

In this paper we report on a morphological investigation of the growth mechanism of silicon carbide (SiC) on the Si(111)7 x 7 surface. The role of the substrate morphology and temperature during acetylene exposure has been studied with the aim to obtain high quality SiC films. We compared two starting points of silicon substrate: one characterised by step bunching and one by monoatomic terraces of the same width. Our results indicate that a lower density of defects and holes is present in the former case. (C) 2004 Elsevier B.V. All rights reserved.
22nd European Conference on Surface Science (ECOSS 22)
Prague, CZECH REPUBLIC
SEP 07-12, 2003
Inst Phys Acad Sci Czecg Republic, European Phys Soc, Surface Interface Div, Surf Div Int Union Vacuum Sci, Tech & Applicat
Rilevanza internazionale
contributo
7-set-2003
Settore FIS/03 - Fisica della Materia
English
Alkynes; Scanning tunneling microscopy; Silicon carbide; Step formation and bunching; Surface structure, morphology, roughness, and topography
Intervento a convegno
Scarselli, M.a., Castrucci, P., Piancastelli, M.n., & DE CRESCENZI, M. (2004). Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface. In Surface Science (pp.155-159) [10.1016/j.susc.2004.06.065].
Scarselli, Ma; Castrucci, P; Piancastelli, Mn; DE CRESCENZI, M
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/30829
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