We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.

Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). THz intersubband emitter based on silicon. In 2021 27th International Semiconductor Laser Conference (ISLC) (pp.1-1). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISLC51662.2021.9615725].

THz intersubband emitter based on silicon

Persichetti L.;
2021-01-01

Abstract

We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.
27th International Semiconductor Laser Conference, ISLC 2021
Postdam (Deutschland)
2021
27.
Rilevanza internazionale
2021
Settore FIS/03 - FISICA DELLA MATERIA
English
Intervento a convegno
Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). THz intersubband emitter based on silicon. In 2021 27th International Semiconductor Laser Conference (ISLC) (pp.1-1). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISLC51662.2021.9615725].
Stark, D; Mirza, M; Persichetti, L; Montanari, M; Markmann, S; Beck, M; Grange, T; Birner, S; Virgilio, M; Ciano, C; Ortolani, M; Corley, C; Capellini...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/300601
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