We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.
Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). THz intersubband emitter based on silicon. In 2021 27th International Semiconductor Laser Conference (ISLC) (pp.1-1). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISLC51662.2021.9615725].
THz intersubband emitter based on silicon
Persichetti L.;
2021-01-01
Abstract
We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.File in questo prodotto:
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