We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.
Patella, F., Arciprete, F., Placidi, E., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2008). Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. APPLIED PHYSICS LETTERS, 93(23), 231904 [10.1063/1.3040327].
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach
PATELLA, FULVIA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO;
2008-01-01
Abstract
We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons