Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications

Thin films based on aluminum nitride were obtained by fs-laser assisted Pulsed Laser Deposition (fs-PLD) at room temperature on tantalum substrates for studying the electron emission performance in the temperature range 700- 1600 °C, so to investigate the possibility of their exploitation as thermionic cathodes. Results of structural, chemical and morphological analyses show the growth of nanostructured thin films with a significant oxygen contamination, forming a mixture of crystalline aluminum nitride and aluminum oxide as well as metallic aluminum inclusions. Despite the considerable presence of oxygen, the developed cathodes demonstrate to possess promising thermionic emission characteristics, with a work function of 3.15 eV, a valuable Richardson constant of 20.25 A/(cm²K²), and a highly thermo-electronic stability up to operating temperatures of 1600 °C.