Thin films based on aluminum nitride were obtained by fs-laser assisted Pulsed Laser Deposition (fs-PLD) at room temperature on tantalum substrates for studying the electron emission performance in the temperature range 700- 1600 °C, so to investigate the possibility of their exploitation as thermionic cathodes. Results of structural, chemical and morphological analyses show the growth of nanostructured thin films with a significant oxygen contamination, forming a mixture of crystalline aluminum nitride and aluminum oxide as well as metallic aluminum inclusions. Despite the considerable presence of oxygen, the developed cathodes demonstrate to possess promising thermionic emission characteristics, with a work function of 3.15 eV, a valuable Richardson constant of 20.25 A/(cm²K²), and a highly thermo-electronic stability up to operating temperatures of 1600 °C.

Bellucci, A., Orlando, S., Girolami, M., Mastellone, M., Serpente, V., Paci, B., et al. (2021). Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications. In NanoInnovation 2020 (pp.020004). AIP [10.1063/5.0068496].

Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications

Polini, Riccardo;
2021-11-01

Abstract

Thin films based on aluminum nitride were obtained by fs-laser assisted Pulsed Laser Deposition (fs-PLD) at room temperature on tantalum substrates for studying the electron emission performance in the temperature range 700- 1600 °C, so to investigate the possibility of their exploitation as thermionic cathodes. Results of structural, chemical and morphological analyses show the growth of nanostructured thin films with a significant oxygen contamination, forming a mixture of crystalline aluminum nitride and aluminum oxide as well as metallic aluminum inclusions. Despite the considerable presence of oxygen, the developed cathodes demonstrate to possess promising thermionic emission characteristics, with a work function of 3.15 eV, a valuable Richardson constant of 20.25 A/(cm²K²), and a highly thermo-electronic stability up to operating temperatures of 1600 °C.
NanoInnovation 2020
Roma
2020
Marco Rossi, Vittorio Morandi, Daniele Passeri, Francesca A. Scaramuzzo, Marco Vittori Antisari
Rilevanza internazionale
contributo
nov-2021
Settore CHIM/03 - CHIMICA GENERALE E INORGANICA
Settore FIS/03 - FISICA DELLA MATERIA
Settore ING-IND/22 - SCIENZA E TECNOLOGIA DEI MATERIALI
English
This work has been funded by project AMADEUS, which has received funds from The European Union Horizon 2020 research and innovation program, FET-OPEN action, under Grant Agreement 737054.
https://aip.scitation.org/doi/10.1063/5.0068496
Intervento a convegno
Bellucci, A., Orlando, S., Girolami, M., Mastellone, M., Serpente, V., Paci, B., et al. (2021). Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications. In NanoInnovation 2020 (pp.020004). AIP [10.1063/5.0068496].
Bellucci, A; Orlando, S; Girolami, M; Mastellone, M; Serpente, V; Paci, B; Generosi, A; Mezzi, A; Kaciulis, S; Polini, R; Trucchi, Dm
File in questo prodotto:
File Dimensione Formato  
AIP_Conf_Proc_2021_2416_020004.pdf

accesso aperto

Descrizione: articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 1.53 MB
Formato Adobe PDF
1.53 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/281201
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? ND
social impact