In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown. Measurements show a gain higher than 29dB, 2.1dB average NF in the 34÷37.5GHz design band and a 1dBcp around 23-24dBm in the 35÷36.5GHz target band, showing a good suitability to highgain, low-noise and medium-power requests. Comparison with GaN-on-SiC-based similar works confirms the feasibility of the adoption of GaN-on-Si technology for space-borne applications.
Pace, L., Longhi, P.e., Ciccognani, W., Colangeli, S., Leblanc, R., Limiti, E. (2021). A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies. In 2020 50th European Microwave Conference, EuMC 2020 (pp.1023-1026). Institute of Electrical and Electronics Engineers Inc. [10.23919/EuMC48046.2021.9338196].
A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies
Longhi P. E.;Ciccognani W.;Colangeli S.;Limiti E.
2021-01-01
Abstract
In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown. Measurements show a gain higher than 29dB, 2.1dB average NF in the 34÷37.5GHz design band and a 1dBcp around 23-24dBm in the 35÷36.5GHz target band, showing a good suitability to highgain, low-noise and medium-power requests. Comparison with GaN-on-SiC-based similar works confirms the feasibility of the adoption of GaN-on-Si technology for space-borne applications.| File | Dimensione | Formato | |
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