This paper reports the design, manufacturing and test of a power amplifier, based on a newly power bar device developed on GaN technology, conceived for L-Band applications. The realized active device is a single 10mm active periphery GaN HEMT, realized by paralleling eight 1.25 mm-gate periphery devices (10x125 μm), fabricated on a 0.5 μm GaN-on-SiC technology by Leonardo company. The power amplifier realized with this device is tested in pulsed condition, demonstrating an output power higher than 40 W at 30 V of drain voltage supply, with an associated efficiency of 50 % at 3 dB of gain compression.
Colantonio, P., Cipriani, E., Giannini, F. (2020). A Single GaN HEMT L-band 40 W Power Module for Navigation Applications. In 23rd International Microwave and Radar Conference (MIKON) (pp.407-410) [10.23919/MIKON48703.2020.9253963].
A Single GaN HEMT L-band 40 W Power Module for Navigation Applications
Colantonio, Paolo
Membro del Collaboration Group
;Giannini, Franco
2020-01-01
Abstract
This paper reports the design, manufacturing and test of a power amplifier, based on a newly power bar device developed on GaN technology, conceived for L-Band applications. The realized active device is a single 10mm active periphery GaN HEMT, realized by paralleling eight 1.25 mm-gate periphery devices (10x125 μm), fabricated on a 0.5 μm GaN-on-SiC technology by Leonardo company. The power amplifier realized with this device is tested in pulsed condition, demonstrating an output power higher than 40 W at 30 V of drain voltage supply, with an associated efficiency of 50 % at 3 dB of gain compression.| File | Dimensione | Formato | |
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