This work presents a self-biased 2-stacked power amplifier cell that shows, in simulations, an output power in excess of 33 dBm and gain and power added efficiency (PAE) above 6 dB and 27 %, respectively, over a 33.5 GHz to 39.5 GHz bandwidth. The cell has been developed on a commercial 100 nm GaN-on-Si process, applying space derating rules at center frequency, where the output power is almost 33.8 dBm, the associated gain is higher than 7 dB and PAE is above 35 %.
Ramella, C., Pirola, M., Colantonio, P. (2020). A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology. In 23rd International Microwave and Radar Conference (MIKON) (pp.204-208). IEEE [10.23919/MIKON48703.2020.9253861].
A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology
Colantonio, PaoloMembro del Collaboration Group
2020-01-01
Abstract
This work presents a self-biased 2-stacked power amplifier cell that shows, in simulations, an output power in excess of 33 dBm and gain and power added efficiency (PAE) above 6 dB and 27 %, respectively, over a 33.5 GHz to 39.5 GHz bandwidth. The cell has been developed on a commercial 100 nm GaN-on-Si process, applying space derating rules at center frequency, where the output power is almost 33.8 dBm, the associated gain is higher than 7 dB and PAE is above 35 %.| File | Dimensione | Formato | |
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