In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35-36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well.
Pace, L., Costanzo, F., Longhi, P.e., Ciccognani, W., Colangeli, S., Suriani, A., et al. (2020). Design of a ka-band single-chip front-end based on a 100 nm GaN-on-Si technology. In 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2020 - Proceedings (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/INMMiC46721.2020.9160306].
Design of a ka-band single-chip front-end based on a 100 nm GaN-on-Si technology
Costanzo F.;Longhi P. E.;Ciccognani W.;Colangeli S.;Limiti E.
2020-01-01
Abstract
In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35-36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
