This paper presents the design of a balanced power amplifier (PA) using a 130-nm SiGe BiCMOS process. The PA consists of three stages, each based on cascode topology. The design of the PA was optimized using low-Q matching networks for the D-band applications. The results based on EM-simulation of the PA, with assistance of vbic and hicum models for the transistor, demonstrate an average peak gain of 26.5 dB with the 3-dB bandwidth higher than 80 GHz. In terms of large-signal, the PA provides an output power and PAE larger than 14 dBm, and 4 percent, respectively, in the D-band. Moreover, it provides an output power greater than 13 dBm at 110–190 GHz. The PA is highly suitable to drive frequency multipliers for the development of broadband sub-THz signal sources. The future work includes measurement of the PA.

Ali, A., Yun, J., Ng, H.j., Kissinger, D., Giannini, F., Colantonio, P. (2020). D-Band Balanced PA with Wideband Performance in BiCMOS Technology. In 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) (pp.1-3). IEEE [10.1109/INMMiC46721.2020.9160324].

D-Band Balanced PA with Wideband Performance in BiCMOS Technology

Giannini, Franco;Colantonio, Paolo
Supervision
2020

Abstract

This paper presents the design of a balanced power amplifier (PA) using a 130-nm SiGe BiCMOS process. The PA consists of three stages, each based on cascode topology. The design of the PA was optimized using low-Q matching networks for the D-band applications. The results based on EM-simulation of the PA, with assistance of vbic and hicum models for the transistor, demonstrate an average peak gain of 26.5 dB with the 3-dB bandwidth higher than 80 GHz. In terms of large-signal, the PA provides an output power and PAE larger than 14 dBm, and 4 percent, respectively, in the D-band. Moreover, it provides an output power greater than 13 dBm at 110–190 GHz. The PA is highly suitable to drive frequency multipliers for the development of broadband sub-THz signal sources. The future work includes measurement of the PA.
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)
Cardiff, UK
2020
Rilevanza internazionale
contributo
Settore ING-INF/01
English
Intervento a convegno
Ali, A., Yun, J., Ng, H.j., Kissinger, D., Giannini, F., Colantonio, P. (2020). D-Band Balanced PA with Wideband Performance in BiCMOS Technology. In 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) (pp.1-3). IEEE [10.1109/INMMiC46721.2020.9160324].
Ali, A; Yun, J; Ng, Hj; Kissinger, D; Giannini, F; Colantonio, P
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/253067
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