This paper presents the design of a single-ended power amplifier (PA) based on a 130-nm SiGe BiCMOS process with the fmax of 500 GHz. The PA comprises of three stages, with each stage based on cascode topology. The design was optimized to obtain a peak gain of 30 dB with 3-dB bandwidth larger than D-band (110-170 GHz) and peak output power higher than 12 dBm. The simulation results show that the PA can provide average peak gain of 30 dB with 3-dB bandwidth of 90 GHz. In terms of large-signal, it provides output power and PAE larger than 12 dBm, and 5%, respectively, at 115-180 GHz. Moreover, it provides an output power greater than 10dBm at 105-200 GHz. The PA is highly suitable for the development of broadband sub- THz signal sources. The future work includes measurement of the PA.

Ali, A., Yun, J., Ng, H.j., Kissinger, D., Giannini, F., Colantonio, P. (2020). 90 GHz Bandwidth Single-Ended PA for D-Band Applications in BiCMOS Technology. In 2020 4th Australian Microwave Symposium (AMS) (pp.1-2). IEEE [10.1109/AMS48904.2020.9059473].

90 GHz Bandwidth Single-Ended PA for D-Band Applications in BiCMOS Technology

Giannini F.;Colantonio P.
Supervision
2020

Abstract

This paper presents the design of a single-ended power amplifier (PA) based on a 130-nm SiGe BiCMOS process with the fmax of 500 GHz. The PA comprises of three stages, with each stage based on cascode topology. The design was optimized to obtain a peak gain of 30 dB with 3-dB bandwidth larger than D-band (110-170 GHz) and peak output power higher than 12 dBm. The simulation results show that the PA can provide average peak gain of 30 dB with 3-dB bandwidth of 90 GHz. In terms of large-signal, it provides output power and PAE larger than 12 dBm, and 5%, respectively, at 115-180 GHz. Moreover, it provides an output power greater than 10dBm at 105-200 GHz. The PA is highly suitable for the development of broadband sub- THz signal sources. The future work includes measurement of the PA.
4th Australian Microwave Symposium
Sydney
2020
Rilevanza internazionale
contributo
Settore ING-INF/01
English
Power generation Broadband communication Bandwidth Silicon germanium Gain BiCMOS integrated circuits Microwave circuits Broadband PA SiGe BiCMOS Single-ended
Intervento a convegno
Ali, A., Yun, J., Ng, H.j., Kissinger, D., Giannini, F., Colantonio, P. (2020). 90 GHz Bandwidth Single-Ended PA for D-Band Applications in BiCMOS Technology. In 2020 4th Australian Microwave Symposium (AMS) (pp.1-2). IEEE [10.1109/AMS48904.2020.9059473].
Ali, A; Yun, J; Ng, Hj; Kissinger, D; Giannini, F; Colantonio, P
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/248447
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