The antenna array designed to operate over 0.450-0.475 Terahertz comprises two dielectric resonators (DRs) that are stacked vertically on top of each other and placed on the surface of the slot antenna fabricated on a silicon substrate using standard CMOS technology. The slot created in the silicon substrate is meandering and is surrounded by metallic via-wall to prevent energy dissipation. The antenna has a maximum gain of 4.5dBi and radiation efficiency of 45.7% at 0.4625 THz. The combination of slot and vias transform the antenna to a metamaterial structure that provides a relatively small antenna footprint. The proposed series-fed double DRs on-chip antenna array is useful for applications in THz integrated circuits.
Alibakhshikenari, M., Virdee, B.s., See, C.h., Abd-Alhameed, R.a., Falcone, F., Limiti, E. (2019). Silicon-Based 0.450-0.475 THz series-fed double dielectric resonator on-chip antenna array based on metamaterial properties for integrated-circuits. In Proceedings of the 13th International Congress on Artificial Material for Novel Wave Phenomena (MetaMaterials’2019) (pp.X026-X028). IEEE [10.1109/MetaMaterials.2019.8900949].
Silicon-Based 0.450-0.475 THz series-fed double dielectric resonator on-chip antenna array based on metamaterial properties for integrated-circuits
Limiti E.
2019-09-01
Abstract
The antenna array designed to operate over 0.450-0.475 Terahertz comprises two dielectric resonators (DRs) that are stacked vertically on top of each other and placed on the surface of the slot antenna fabricated on a silicon substrate using standard CMOS technology. The slot created in the silicon substrate is meandering and is surrounded by metallic via-wall to prevent energy dissipation. The antenna has a maximum gain of 4.5dBi and radiation efficiency of 45.7% at 0.4625 THz. The combination of slot and vias transform the antenna to a metamaterial structure that provides a relatively small antenna footprint. The proposed series-fed double DRs on-chip antenna array is useful for applications in THz integrated circuits.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
