A novel 50μm Silicon-based on-chip antenna is presented that combines metamaterial (MTM) and substrate integrated waveguide (SIW) technologies for integration in THz circuits operating from 0.28 to 0.30 THz. The antenna structure comprises a square patch antenna implemented on a Silicon substrate with a ground-plane. Embedded diagonally in the patch are two T-shaped slots and the edges of the patch is short-circuited to the ground-plane with metal vias, which convert the structure into a substrate integrated waveguide. This structure reduces loss resulting from surface waves and Silicon dielectric substrate. The modes in the structure can be excited through two coaxial ports connected to the patch from the underside of the Silicon substrate. The proposed antenna structure is essentially transformed to exhibit metamaterial properties by realizing two T-shaped slots, which enlarges the effective aperture area of the miniature antenna and significantly enhances its impedance bandwidth and radiation characteristics between 0.28 THz to 0.3 THz. It has an average gain and efficiency of 4.5dBi and 65%, respectively. In addition, it is a self-isolated structure with high isolation of better than 30dB between the two ports. The on-chip antenna has dimensions of 800×800×60 μm 3 .
Alibakhshikenari, M., Virdee, B.s., See, C.h., Abd-Alhameed, R.a., Falcone, F., Limiti, E. (2019). High-Performance 50μm Silicon-Based On-Chip Antenna with High Port-to-Port Isolation Implemented by Metamaterial and SIW Concepts for THz Integrated Systems. In Proceedings of the 13th International Congress on Artificial Material for Novel Wave Phenomena (MetaMaterials’2019) (pp.X023-X025). Institute of Electrical and Electronics Engineers Inc. [10.1109/MetaMaterials.2019.8900874].
High-Performance 50μm Silicon-Based On-Chip Antenna with High Port-to-Port Isolation Implemented by Metamaterial and SIW Concepts for THz Integrated Systems
Limiti E.
2019-09-01
Abstract
A novel 50μm Silicon-based on-chip antenna is presented that combines metamaterial (MTM) and substrate integrated waveguide (SIW) technologies for integration in THz circuits operating from 0.28 to 0.30 THz. The antenna structure comprises a square patch antenna implemented on a Silicon substrate with a ground-plane. Embedded diagonally in the patch are two T-shaped slots and the edges of the patch is short-circuited to the ground-plane with metal vias, which convert the structure into a substrate integrated waveguide. This structure reduces loss resulting from surface waves and Silicon dielectric substrate. The modes in the structure can be excited through two coaxial ports connected to the patch from the underside of the Silicon substrate. The proposed antenna structure is essentially transformed to exhibit metamaterial properties by realizing two T-shaped slots, which enlarges the effective aperture area of the miniature antenna and significantly enhances its impedance bandwidth and radiation characteristics between 0.28 THz to 0.3 THz. It has an average gain and efficiency of 4.5dBi and 65%, respectively. In addition, it is a self-isolated structure with high isolation of better than 30dB between the two ports. The on-chip antenna has dimensions of 800×800×60 μm 3 .I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
